Study of defects in electron irradiated CuInSe[sub 2] by positron lifetime spectroscopy
| dc.contributor | Aalto-yliopisto | fi |
| dc.contributor | Aalto University | en |
| dc.contributor.author | Polity, A. | |
| dc.contributor.author | Krause-Rehberg, R. | |
| dc.contributor.author | Staab, T. E. M. | |
| dc.contributor.author | Puska, Martti J. | |
| dc.contributor.author | Klais, J. | |
| dc.contributor.author | Möller, H. J. | |
| dc.contributor.author | Meyer, B. K. | |
| dc.contributor.department | Teknillisen fysiikan laitos | fi |
| dc.contributor.department | Department of Applied Physics | en |
| dc.contributor.school | Perustieteiden korkeakoulu | fi |
| dc.contributor.school | School of Science | en |
| dc.date.accessioned | 2015-09-24T09:01:51Z | |
| dc.date.available | 2015-09-24T09:01:51Z | |
| dc.date.issued | 1998 | |
| dc.description.abstract | CuInSe2 was studied in the as-grown state and after low-temperature (4 K) 2 MeV electron irradiation. The positron bulk lifetime of 235 ps was measured for the unirradiated sample. The positron bulk lifetime was theoretically calculated and is in good agreement with the experimental value. In addition, the defect-related lifetimes for mono-, di-, and trivacancies are theoretically determined. An increased average positron lifetime indicated after electron irradiation the appearance of open-volume defects, most probably of divacancy type. The disappearance of this defect was observed during annealing below 250 K. Other defects were formed leading to a divacancy signal at least stable up to 600 K in the temperature range above 450 K. | en |
| dc.description.version | Peer reviewed | en |
| dc.format.extent | 71-78 | |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Polity, A. & Krause-Rehberg, R. & Staab, T. E. M. & Puska, Martti J. & Klais, J. & Möller, H. J. & Meyer, B. K. 1998. Study of defects in electron irradiated CuInSe[sub 2] by positron lifetime spectroscopy. Journal of Applied Physics. Volume 83, Issue 1. 71-78. ISSN 0021-8979 (printed). DOI: 10.1063/1.366703. | en |
| dc.identifier.doi | 10.1063/1.366703 | |
| dc.identifier.issn | 0021-8979 (printed) | |
| dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/17873 | |
| dc.identifier.urn | URN:NBN:fi:aalto-201509234468 | |
| dc.language.iso | en | en |
| dc.publisher | AIP Publishing | en |
| dc.relation.ispartofseries | Journal of Applied Physics | en |
| dc.relation.ispartofseries | Volume 83, Issue 1 | |
| dc.rights | © 1998 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 83, Issue 1 and may be found at http://scitation.aip.org/content/aip/journal/jap/83/1/10.1063/1.366703. | en |
| dc.rights.holder | AIP Publishing | |
| dc.subject.keyword | positron lifetimes | en |
| dc.subject.keyword | defect chemistry | en |
| dc.subject.other | Physics | en |
| dc.title | Study of defects in electron irradiated CuInSe[sub 2] by positron lifetime spectroscopy | en |
| dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
| dc.type.dcmitype | text | en |
| dc.type.version | Final published version | en |
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