Charge sensitivity of the inductive single-electron transistor
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Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2005
Major/Subject
Mcode
Degree programme
Language
en
Pages
092502/1-3
Series
Applied Physics Letters, Volume 87, Issue 9
Abstract
We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillatorquantum noise. Sensitivity better than 10−6e/√Hz is possible with a high Q value ∼103, or using a superconducting quantum interference deviceamplifier. The model is compared to experiment, where charge sensitivity 3×10−5e/√Hz and bandwidth 100 MHz are achieved.Description
Keywords
charge sensitivity, single-electron tansistors, Josephson inductance, Cooper-pair transistors, oscillators, quantum noise, amplifiers, tunneling
Other note
Citation
Sillanpää, Mika A. & Roschier, Leif & Hakonen, Pertti J. 2005. Charge sensitivity of the inductive single-electron transistor. Applied Physics Letters. Volume 87, Issue 9. 092502/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2034096.
