Tensile-strained GaAsN quantum dots on InP

Loading...
Thumbnail Image
Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2007
Major/Subject
Mcode
Degree programme
Language
en
Pages
172110/1-3
Series
Applied Physics Letters, Volume 90, Issue 17
Abstract
Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situannealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1eV, respectively.
Description
Keywords
quantum dots, annealing, III‐V semiconductors, wetting, quantum wells
Other note
Citation
Pohjola, P. & Hakkarainen, T. & Koskenvaara, H. & Sopanen, M. & Lipsanen, Harri & Sainio, J. 2007. Tensile-strained GaAsN quantum dots on InP. Applied Physics Letters. Volume 90, Issue 17. P. 172110/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2719662.