Statistics for Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature
Total visits
| views | |
|---|---|
| Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature | 1 |
Total visits per month
| views | |
|---|---|
| October 2024 | 0 |
| November 2024 | 0 |
| December 2024 | 0 |
| January 2025 | 0 |
| February 2025 | 0 |
| March 2025 | 0 |
| April 2025 | 0 |
File Visits
| views | |
|---|---|
| A1_koblmuller_g_2010.pdf | 94 |
Top country views
| views | |
|---|---|
| India | 1 |
Top city views
| views | |
|---|---|
| Guntur | 1 |