Charge sensitivity of the inductive single-electron transistor

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2005

Department

Department of Applied Physics

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Mcode

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Language

en

Pages

3

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Applied Physics Letters, Volume 87, issue 9, pp. 1-3

Abstract

We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillator quantum noise. Sensitivity better than 10−6e/Hz⎯⎯⎯⎯⎯√ is possible with a high Q value ∼103, or using a superconducting quantum interference device amplifier. The model is compared to experiment, where charge sensitivity 3×10−5e/Hz⎯⎯⎯⎯⎯√ and bandwidth 100 MHz are achieved.

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Keywords

charge sensitivity, single-electron tansistor, Josephson inductance, Cooper-pair transistor, charge sensitivity, single-electron tansistors, Josephson inductance, Cooper-pair transistors

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DOI

10.1063/1.2034096

Citation

Sillanpää, M A, Roschier, L & Hakonen, P J 2005, 'Charge sensitivity of the inductive single-electron transistor', Applied Physics Letters, vol. 87, no. 9, 092502, pp. 1-3. https://doi.org/10.1063/1.2034096

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https://urn.fi/URN:NBN:fi:aalto-202510087667

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[article-cris] Perustieteiden korkeakoulu / SCI