Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal organic chemical vapour deposition

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorTengborn, E.
dc.contributor.authorRummukainen, M.
dc.contributor.authorTuomisto, F.
dc.contributor.authorSaarinen, K.
dc.contributor.authorRudzinski, M.
dc.contributor.authorHageman, P.R.
dc.contributor.authorLarsen, P.K.
dc.contributor.authorNordlund, A.
dc.contributor.departmentDepartment of Applied Physics
dc.date.accessioned2018-05-22T14:46:29Z
dc.date.available2018-05-22T14:46:29Z
dc.date.issued2006
dc.description.abstractPositron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor deposition on misoriented 4H-SiC substrates. Two kinds of vacancy defects are observed: Ga vacancies and larger vacancy clusters in all the studied layers. In addition to vacancies, positrons annihilate at shallow traps that are likely to be dislocations. The results show that the vacancy concentration increases and the shallow positron trap concentration decreases with the increasing substrate misorientation.en
dc.description.versionPeer revieweden
dc.format.extent3
dc.format.extent1-3
dc.format.mimetypeapplication/pdf
dc.identifier.citationTengborn , E , Rummukainen , M , Tuomisto , F , Saarinen , K , Rudzinski , M , Hageman , P R , Larsen , P K & Nordlund , A 2006 , ' Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal organic chemical vapour deposition ' , Applied Physics Letters , vol. 89 , no. 9 , 091905 , pp. 1-3 . https://doi.org/10.1063/1.2338887en
dc.identifier.doi10.1063/1.2338887
dc.identifier.issn1077-3118
dc.identifier.otherPURE UUID: ba27d2f1-1f14-48f3-963f-176df37e54d7
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/ba27d2f1-1f14-48f3-963f-176df37e54d7
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/13456009/1_2E2338887.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/31128
dc.identifier.urnURN:NBN:fi:aalto-201805222568
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 89, issue 9en
dc.rightsopenAccessen
dc.subject.keywordannihilation
dc.subject.keywordGaN
dc.subject.keywordmisoriented
dc.subject.keywordpositron
dc.subject.keywordvacancy
dc.titleEffect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal organic chemical vapour depositionen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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