Theoretical study of quantum emitters in two-dimensional silicon carbide monolayers
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Date
2020-10-07
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
8
Series
Physical Review B, Volume 102, issue 13, pp. 1-8
Abstract
The electronic and optical features of some potential single-photon sources in two-dimensional silicon carbide monolayers is studied via ab initio calculations and group theory analyses. A few point defects in three charge states (negative, positive, and neutral) are considered. By applying performance criteria, Stone-Wales defects without and with combination of antisite defects are studied in detail. The formation energy calculations reveal that neutral and positive charge states of these defects are stable. We compute the zero-phonon-line energy, the Huang-Rhys (HR) factor, and the photoluminescence spectrum for the available transitions in different charge states. The calculated HR values and the related Debye-Waller factors guarantee that the Stone-Wales defects have a high potential of performing as a promising single-photon emitter.Description
Keywords
Other note
Citation
Hassanzada, Q, Sarsari, I A, Hashemi, A, Ghojavand, A, Gali, A & Abdi, M 2020, ' Theoretical study of quantum emitters in two-dimensional silicon carbide monolayers ', Physical Review B, vol. 102, no. 13, 134103, pp. 1-8 . https://doi.org/10.1103/PhysRevB.102.134103