Shot noise of a multiwalled carbon nanotube field effect transistor

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2007
Major/Subject
Mcode
Degree programme
Language
en
Pages
125419/1-5
Series
Physical Review B, Volume 75, Issue 12
Abstract
We have investigated shot noise in a 6−nm-diameter, semiconducting multiwalled carbon nanotube field effect transistor at 4.2 K over the frequency range of 600–950 MHz. We find a transconductance of 3–3.5 μS for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 μV/√Hz for V > 0 and V < 0, respectively. As effective charge noise, this corresponds to (2–3)×10 exp −5 e/√Hz.
Description
Keywords
carbon nanotubes, shot noise, field effect transistor (FET)
Other note
Citation
Wu, Fan & Tsuneta, Taku & Tarkiainen, Reeta & Gunnarsson, David & Wang, Tai-Hong & Hakonen, Pertti J. 2007. Shot noise of a multiwalled carbon nanotube field effect transistor. Physical Review B. Volume 75, Issue 12. 125419/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.75.125419