AlN metal-semiconductor field-effect transistors using Si-ion implantation

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2018-04-01
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Mcode
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Language
en
Pages
5
Series
Japanese Journal of Applied Physics, Volume 57, issue 4
Abstract
We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230°C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250°C. The off-state breakdown voltage is 2370V for drain-to-gate spacing of 25μm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.
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Citation
Okumura, H, Suihkonen, S, Lemettinen, J, Uedono, A, Zhang, Y, Piedra, D & Palacios, T 2018, ' AlN metal-semiconductor field-effect transistors using Si-ion implantation ', Japanese Journal of Applied Physics, vol. 57, no. 4, 04FR11 . https://doi.org/10.7567/JJAP.57.04FR11