Electronic stopping calculated using explicit phase shift factors

Loading...
Thumbnail Image
Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2001
Major/Subject
Mcode
Degree programme
Language
en
Pages
134113/1-5
Series
Physical Review B, Volume 63, Issue 13
Abstract
Predicting range profiles of low-energy (0.1–10 keV/amu) ions implanted in materials is a long-standing problem of considerable theoretical and practical interest. We combine here the best available method for treating the nuclear slowing down, namely a molecular-dynamics range calculation method, with a method based on density-functional theory to calculate electronic slowing down for each ion-target atom pair separately. Calculation of range profiles of technologically important dopants in Si shows that the method is of comparable accuracy to previous methods for B, P, and As implantation of Si, and clearly more accurate for Al implantation of Si.
Description
Keywords
stopping power, ion beams, density-functional theory
Other note
Citation
Sillanpää, J. & Peltola, J. & Nordlund, K. & Keinonen, J. & Puska, Martti J. 2001. Electronic stopping calculated using explicit phase shift factors. Physical Review B. Volume 63, Issue 13. 134113/1-5. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.63.134113.