Robust Magnetoelectric Coupling in FeTiO3/Ga2O3 Non-van der Waals Heterostructures

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorJin, Cuien_US
dc.contributor.authorTang, Xiaoen_US
dc.contributor.authorSun, Qilongen_US
dc.contributor.authorMu, Chenxien_US
dc.contributor.authorKrasheninnikov, Arkady V.en_US
dc.contributor.authorKou, Liangzhien_US
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.groupauthorSoft Matter and Wettingen
dc.contributor.organizationShandong Jianzhu Universityen_US
dc.contributor.organizationNanjing Forestry Universityen_US
dc.contributor.organizationQueensland University of Technologyen_US
dc.date.accessioned2024-05-15T07:52:29Z
dc.date.available2024-05-15T07:52:29Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2025-02-28en_US
dc.date.issued2024-03-14en_US
dc.descriptionPublisher Copyright: © 2024 American Chemical Society.
dc.description.abstractMagnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.en
dc.description.versionPeer revieweden
dc.format.extent8
dc.identifier.citationJin, C, Tang, X, Sun, Q, Mu, C, Krasheninnikov, A V & Kou, L 2024, ' Robust Magnetoelectric Coupling in FeTiO 3 /Ga 2 O 3 Non-van der Waals Heterostructures ', Journal of Physical Chemistry Letters, vol. 15, no. 10, pp. 2650-2657 . https://doi.org/10.1021/acs.jpclett.4c00029en
dc.identifier.doi10.1021/acs.jpclett.4c00029en_US
dc.identifier.issn1948-7185
dc.identifier.otherPURE UUID: 57250c12-fd20-4abe-bed2-6d5273ae47bben_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/57250c12-fd20-4abe-bed2-6d5273ae47bben_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85186376127&partnerID=8YFLogxKen_US
dc.identifier.otherPURE LINK: https://www.hzdr.de/publications/Publ-39035en_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/127740
dc.identifier.urnURN:NBN:fi:aalto-202405153354
dc.language.isoenen
dc.publisherAmerican Chemical Society
dc.relation.ispartofseriesJournal of Physical Chemistry Letters
dc.relation.ispartofseriesVolume 15, issue 10, pp. 2650-2657
dc.rightsembargoedAccessen
dc.titleRobust Magnetoelectric Coupling in FeTiO3/Ga2O3 Non-van der Waals Heterostructuresen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
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