Robust Magnetoelectric Coupling in FeTiO3/Ga2O3 Non-van der Waals Heterostructures

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2024-03-14
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en
Pages
8
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Journal of Physical Chemistry Letters, Volume 15, issue 10, pp. 2650-2657
Abstract
Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.
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Publisher Copyright: © 2024 American Chemical Society.
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Jin, C, Tang, X, Sun, Q, Mu, C, Krasheninnikov, A V & Kou, L 2024, ' Robust Magnetoelectric Coupling in FeTiO 3 /Ga 2 O 3 Non-van der Waals Heterostructures ', Journal of Physical Chemistry Letters, vol. 15, no. 10, pp. 2650-2657 . https://doi.org/10.1021/acs.jpclett.4c00029