Double Heterostructure Step Recovery Diode Based on Gallium Arsenide Technology
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Helsinki University of Technology |
Master's thesis
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Author
Date
1996
Department
Major/Subject
Elektronifysiikka
Mcode
S-69
Degree programme
Language
en
Pages
61
Series
Abstract
This Master's Thesis deals with the study and fabrication of double heterostructure step recovery diode based on gallium arsenide technology. The step recovery diode behaves as a two-state capacitor of large capacitance under forward bias and small capacitance under reverse bias. Ap+-i-n+ double heterostructure step recovery diode (DHSRD) fabricated on AlGaAs structure has demostrated the fastest transition time. The fastest transition times are obtained by the linearly graded bandgap AlxGa1-xAs with grading from x=0-0.15. The linear grading provides an electron field which confines the injected holes closer to the p+ exit region and also provides a drift field to accelerate hole removal during the reverse recovery process. In this Master's thesis, p+-i-n+ based DHSRD have been fabricated with Al0.25Ga0.75As / AlxGa1-xAs / Al0.25Ga0.75As structure and Al0.20Ga0.80As/AlxGa1-xAs/Al0.20Ga0.80As structure, where x = 0 - 0.15. Measurements of the second structural DHSRD show an ideality factor of 1.95 and a rise time of 50 ps, approximately. The capacitance under forward bias is 108 pF, and 0.9 pF under reverse bias.Description
Supervisor
Kuivalainen, PekkaKeywords
p-i-n diode, heterojunction, step recovery diode
