Double Heterostructure Step Recovery Diode Based on Gallium Arsenide Technology
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Helsinki University of Technology | Master's thesis
AbstractThis Master's Thesis deals with the study and fabrication of double heterostructure step recovery diode based on gallium arsenide technology. The step recovery diode behaves as a two-state capacitor of large capacitance under forward bias and small capacitance under reverse bias. Ap+-i-n+ double heterostructure step recovery diode (DHSRD) fabricated on AlGaAs structure has demostrated the fastest transition time. The fastest transition times are obtained by the linearly graded bandgap AlxGa1-xAs with grading from x=0-0.15. The linear grading provides an electron field which confines the injected holes closer to the p+ exit region and also provides a drift field to accelerate hole removal during the reverse recovery process. In this Master's thesis, p+-i-n+ based DHSRD have been fabricated with Al0.25Ga0.75As / AlxGa1-xAs / Al0.25Ga0.75As structure and Al0.20Ga0.80As/AlxGa1-xAs/Al0.20Ga0.80As structure, where x = 0 - 0.15. Measurements of the second structural DHSRD show an ideality factor of 1.95 and a rise time of 50 ps, approximately. The capacitance under forward bias is 108 pF, and 0.9 pF under reverse bias.
p-i-n diode, heterojunction, step recovery diode