Single-electron transistor made of two crossing multiwalled carbon nanotubes and its noise properties

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© 2000 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 77, Issue 24 and may be found at http://scitation.aip.org/content/aip/journal/apl/77/24/10.1063/1.1332107.
Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2000
Major/Subject
Mcode
Degree programme
Language
en
Pages
4037-4039
Series
Applied Physics Letters, Volume 77, Issue 24
Abstract
A three-terminal nanotube device was fabricated from two multiwalled nanotubes by pushing one on top of the other using an atomic-force microscope. The lower nanotube, with gold contacts at both ends, acted as the central island of a single-electron transistor while the upper one functioned as a gate electrode. Coulomb blockade oscillations were observed on the nanotube at sub-Kelvin temperatures. The voltage noise of the nanotube single-electron transistor (SET) was gain dependent as in conventional SETs. The charge sensitivity at 10 Hz was 6×10 exp −4  e/√Hz.
Description
Keywords
carbon nanotubes, atomic-force microscopes
Other note
Citation
Ahlskog, M. & Tarkiainen, R. & Roschier, L. & Hakonen, Pertti J.. 2000. Single-electron transistor made of two crossing multiwalled carbon nanotubes and its noise properties. Applied Physics Letters. Volume 77, Issue 24. 4037-4039. ISSN 0003-6951 (printed). DOI: 10.1063/1.1332107