Effect of transition metals on oxygen precipitation in silicon

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorTalvitie, Heli
dc.contributor.authorHaarahiltunen, Antti
dc.contributor.authorYli-Koski, Marko
dc.contributor.authorSavin, Hele
dc.contributor.authorSinkkonen, Juha
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-04-11T09:00:35Z
dc.date.available2015-04-11T09:00:35Z
dc.date.issued2008
dc.description.abstractEffects of iron and copper impurities on the amount of precipitated oxygen and the oxide precipitate and stacking fault densities in Czochralski-grown silicon have been studied under varying thermal anneals. Silicon wafers were intentionally contaminated with iron or copper and subsequently subjected to different two-step heat treatments to induce oxygen precipitation. The iron contamination level was 2 × 10exp13cm-3 and copper contamination level 6 × 10exp13cm-3. Experiments did not show that iron contamination would have any effect on the amount of precipitated oxygen or the defect densities. Copper contamination tests showed some indication of enhanced oxygen precipitation.en
dc.description.versionPeer revieweden
dc.format.extent4
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTalvitie, Heli & Haarahiltunen, Antti & Yli-Koski, Marko & Savin, Hele & Sinkkonen, Juha. 2008. Effect of transition metals on oxygen precipitation in silicon. Journal of Physics: Conference Series. Volume 100, Part 7. 1742-6596 (electronic). 10.1088/1742-6596/100/7/072045.en
dc.identifier.doi10.1088/1742-6596/100/7/072045
dc.identifier.issn1742-6596 (electronic)fi
dc.identifier.issn1742-6588 (printed)fi
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/15616
dc.identifier.urnURN:NBN:fi:aalto-201504102265
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.ispartofseriesJournal of Physics: Conference Seriesen
dc.relation.ispartofseriesVolume 100, Part 4
dc.rights© IOP Publishing 2008. This work is distributed under the Creative Commons Attribution 3.0 License. http://iopscience.iop.org/1742-6596/100/7/072045fi
dc.rights.holderIOP Publishing
dc.subject.keywordironen
dc.subject.keywordcopperen
dc.subject.keywordsiliconen
dc.subject.keywordoxygen precipitationen
dc.subject.keywordimpuritiesen
dc.subject.keywordCzochralski-grown siliconen
dc.subject.keywordwaferen
dc.subject.keywordcontaminationen
dc.subject.keywordmetal contaminationen
dc.subject.keywordboronen
dc.subject.otherElectrical engineeringen
dc.subject.otherPhysicsen
dc.titleEffect of transition metals on oxygen precipitation in siliconen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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