Effect of transition metals on oxygen precipitation in silicon
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© IOP Publishing 2008. This work is distributed under the Creative Commons Attribution 3.0 License. http://iopscience.iop.org/1742-6596/100/7/072045
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2008
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Mcode
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Language
en
Pages
4
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Journal of Physics: Conference Series, Volume 100, Part 4
Abstract
Effects of iron and copper impurities on the amount of precipitated oxygen and the oxide precipitate and stacking fault densities in Czochralski-grown silicon have been studied under varying thermal anneals. Silicon wafers were intentionally contaminated with iron or copper and subsequently subjected to different two-step heat treatments to induce oxygen precipitation. The iron contamination level was 2 × 10exp13cm-3 and copper contamination level 6 × 10exp13cm-3. Experiments did not show that iron contamination would have any effect on the amount of precipitated oxygen or the defect densities. Copper contamination tests showed some indication of enhanced oxygen precipitation.Description
Keywords
iron, copper, silicon, oxygen precipitation, impurities, Czochralski-grown silicon, wafer, contamination, metal contamination, boron
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Citation
Talvitie, Heli & Haarahiltunen, Antti & Yli-Koski, Marko & Savin, Hele & Sinkkonen, Juha. 2008. Effect of transition metals on oxygen precipitation in silicon. Journal of Physics: Conference Series. Volume 100, Part 7. 1742-6596 (electronic). 10.1088/1742-6596/100/7/072045.