Metastability of the antistructure pair in GaAs
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© 1997 American Physical Society (APS). This is the accepted version of the following article: Pöykkö, S. & Puska, M. J. & Nieminen, Risto M. 1997. Metastability of the antistructure pair in GaAs. Physical Review B. Volume 55, Issue 11. 6914-6917. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.55.6914, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.55.6914.
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Date
1997
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Mcode
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Language
en
Pages
6914-6917
Series
Physical Review B, Volume 55, Issue 11
Abstract
We have studied the metastability of the antistructure (arsenic-antisite gallium-antisite) pair in GaAs using self-consistent, parameter-free total energy methods. Our calculations predict that this defect complex exhibits metastability similar to that of the isolated arsenic antisite. However, the antistructure pair has ionization levels in the band gap in the metastable configuration, unlike the isolated arsenic antisite. The ionization levels enable absorption of infrared light in the metastable state. The results are used to discuss and interpret the arsenic-antisite-type defects observed experimentally in electron-irradiated GaAs.Description
Keywords
compound semiconductors, point defects
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Citation
Pöykkö, S. & Puska, M. J. & Nieminen, Risto M. 1997. Metastability of the antistructure pair in GaAs. Physical Review B. Volume 55, Issue 11. 6914-6917. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.55.6914.