Optoelectronic properties of black silicon fabricated by femtosecond laser in ambient air: exploring a large parameter space
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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4
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Optics Letters, Volume 48, issue 5, pp. 1224 - 1227
Abstract
We study the surface morphology, optical absorption (400–1100 nm), and carrier lifetime of black silicon fabricated by femtosecond (fs) laser in air. We explore a large laser parameter space, for which we adopt a single parameter ξ to describe the cumulative fluence delivered to the sample. We also study the laser-oxidized surface layer by measuring its photoluminescence spectra and comparing its effect on the aforementioned properties. Our study in a broad range of ξ is instructive in choosing laser parameters when targeting different applications.Description
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Radfar, B, Chen, K, Setälä, O, Vähänissi, V, Savin, H & Liu, X 2023, 'Optoelectronic properties of black silicon fabricated by femtosecond laser in ambient air: exploring a large parameter space', Optics Letters, vol. 48, no. 5, pp. 1224 - 1227. https://doi.org/10.1364/OL.481890