Parity effect in Al and Nb single electron transistors in a tunable environment

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2007

Department

Department of Applied Physics

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Language

en

Pages

3

Series

Applied Physics Letters, Volume 91, issue 6, pp. 1-3

Abstract

Two different types of Cooper pair transistors, with Al and Nb islands, have been investigated in a tunable electromagnetic environment. The device with an Al island demonstrates gate charge modulation with 2e periodicity in a wide range of environmental impedances at bath temperatures below 340mK. Contrary to the results of the Al sample, the authors were not able to detect 2e periodicity under any conditions on similar samples with Nb island. The authors attribute this to the material properties of Nb.

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Keywords

single elctron transistor, single electron transistor

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DOI

10.1063/1.2768897

Citation

Savin, A, Meschke, M, Pekola, J, Pashkin, Y A, Li, T F, Im, H & Tsai, J S 2007, 'Parity effect in Al and Nb single electron transistors in a tunable environment', Applied Physics Letters, vol. 91, no. 6, 063512, pp. 1-3. https://doi.org/10.1063/1.2768897

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https://urn.fi/URN:NBN:fi:aalto-202510088057

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[article-cris] Perustieteiden korkeakoulu / SCI