Vacancy defect and defect cluster energetics in ion-implanted ZnO
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© 2010 American Physical Society (APS). This is the accepted version of the following article: Dong, Yufeng & Tuomisto, Filip & Svensson, B. G. & Kuznetsov, A. Yu. & Brillson, Leonard J. 2010. Vacancy defect and defect cluster energetics in ion-implanted ZnO. Physical Review B. Volume 81, Issue 8. 081201/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.81.081201, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.81.081201.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2010
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Language
en
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081201/1-4
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Physical Review B, Volume 81, Issue 8
Abstract
We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.Description
Keywords
ZnO, vacancies, vacancy clusters, optical signatures
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Citation
Dong, Yufeng & Tuomisto, Filip & Svensson, B. G. & Kuznetsov, A. Yu. & Brillson, Leonard J. 2010. Vacancy defect and defect cluster energetics in ion-implanted ZnO. Physical Review B. Volume 81, Issue 8. 081201/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.81.081201