Cradle-to-Gate Life Cycle Assessment of Si IGBT and SiC MOSFET Power Modules

Abstract

Environmental assessments of semiconductor-based power devices face significant challenges due to data scarcity, yet they are essential given the semiconductor industry's escalating environmental impacts. This study addresses the environmental assessment gap for Silicon Integrated Gate Bipolar Transistor (Si IGBT) and Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFET) Power Modules (PMs) by developing a detailed cradle-to-gate Life Cycle Assessment (LCA) model. This model utilizes teardown information and proxy datasets to overcome the limitations commonly found in existing literature. The LCA model captures the environmental impacts associated with the manufacturing phases of both Si IGBT and SiC MOSFET PMs, with a focus on Global Warming Potential (GWP) and Abiotic Depletion of Elements (ADPe). Results reveal that Si IGBT modules exhibit a lower GWP during the manufacturing phase. However, SiC MOSFET PMs are the more sustainable option in specific applications due to their higher operational efficiency. The modelling principles and results aim to aid eco-designers in evaluating and optimizing the environmental performance of the modules. This research lays the groundwork for future cradle-to-grave assessments within specific application contexts, enabling a comprehensive understanding of the full lifecycle impacts of these devices.