STM topography and manipulation of single Au atoms on Si(100),
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
5
Series
Physical Review B, Volume 79, issue 24, pp. 1-5
Abstract
The low-temperature (12 K) adsorption of single Au atoms on Si(100) is studied by scanning tunneling microscopy (STM). Comparison between experimental and calculated STM topographies as well as density-functional-theory calculations of the adsorption energies enable us to identify two adsorption configurations of Au atoms between Si-dimer rows (BDRs) and on top of Si-dimer rows (TDRs). In both adsorption configurations, the Au atoms are covalently bound to two Si atoms through a partial electron transfer from Si to Au. STM manipulation confirms that the TDR adsorption configuration is metastable, whereas the BDR one is the most stable configuration.Description
Keywords
Other note
Citation
Chiaravalloti, F, Riedel, D, Dujardin, G, Pinto, H P & Foster, A S 2009, 'STM topography and manipulation of single Au atoms on Si(100),', Physical Review B, vol. 79, no. 24, 245431, pp. 1-5. https://doi.org/10.1103/PhysRevB.79.245431