MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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7
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Journal of Crystal Growth, Volume 487, pp. 50-56
Abstract
We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.Description
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Lemettinen, J, Okumura, H, Kim, I, Rudzinski, M, Grzonka, J, Palacios, T & Suihkonen, S 2018, 'MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC', Journal of Crystal Growth, vol. 487, pp. 50-56. https://doi.org/10.1016/j.jcrysgro.2018.02.020