Luminescence from excited states in strain-induced InxGa1-xAs quantum dots

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
1995
Major/Subject
Mcode
Degree programme
Language
en
Pages
13868-13871
Series
Physical Review B, Volume 51, Issue 19
Abstract
We have fabricated quantum dots by locally straining InxGa1−xAs quantum wells with self-organized growth of nanometer-scale InP stressors on the sample surface. The structure is completed in a single growth run using metalorganic vapor-phase epitaxy. Photoluminescence from the dots is redshifted by up to 105 meV from the quantum-well peak due to the lateral confinement of excitons. Clearly resolved luminescence peaks from three excited states separated by 16–20 meV are observed when the quantum well is placed at the depth of 1–10 nm from the surface of the sample. The observed redshift and peak separation are in agreement with simple calculations using a finite-element method and two-dimensional parabolic potential model. This structure is easily fabricated and offers a great potential for the optical study of relaxation and recombination phenomena.
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Keywords
luminescence, quantum dots
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Citation
Lipsanen, Harri & Sopanen, M. & Ahopelto, J.. 1995. Luminescence from excited states in strain-induced InxGa1-xAs quantum dots. Physical Review B. Volume 51, Issue 19. P. 13868-13871. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.51.13868.