Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2016-10-31
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en
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1-4
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Applied Physics Letters, Volume 109, issue 18
Abstract
Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.Description
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Kalliovaara, T, Slotte, J, Makkonen, I, Kujala, J, Tuomisto, F, Milazzo, R, Impellizzeri, G, Fortunato, G & Napolitani, E 2016, ' Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium ', Applied Physics Letters, vol. 109, no. 18, 182107, pp. 1-4 . https://doi.org/10.1063/1.4966947