Native vacancy defects in Zn1-x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy
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© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 106, Issue 1 and may be found at http://scitation.aip.org/content/aip/journal/jap/106/1/10.1063/1.3168440.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2009
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Mcode
Degree programme
Language
en
Pages
013524/1-6
Series
Journal of Applied Physics, Volume 106, Issue 1
Abstract
We have studied vacancy defects in chalcopyrite semimagnetic semiconducting mixed Zn1−x(Mn,Co)xGeAs2 bulk crystals with alloy composition x varying between 0.052 to 0.182 using positron annihilation spectroscopy. We identified As vacancies, potentially complexed with the transition metal alloying elements, in all the studied samples, while no cation vacancy related defects were detected. The positron lifetimes for the bulk ZnGeAs2 lattice and neutral As vacancy were determined to be τB=220–230 ps and τAs=300±10 ps, respectively. Our results also show that the p-type conductivity in the samples is not due to cation vacancy related acceptor centers. The As vacancies were found to be present at such low concentrations that they cannot be responsible for the compensation of the p-type conductivity or the reduction of mobility in the Zn1−x(Mn,Co)xGeAs2 samples.Description
Keywords
chalcopyrite, positrons, vacancies
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Citation
Kilanski, L. & Zubiaga, A. & Tuomisto, Filip & Dobrowolski, W. & Domukhovski, V. & Varnavskiy, S. A. & Marenkin, S. F. 2009. Native vacancy defects in Zn1-x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy. Journal of Applied Physics. Volume 106, Issue 1. 013524/1-6. ISSN 0021-8979 (printed). DOI: 10.1063/1.3168440