Strain-induced quantum dots by self-organized stressors
Loading...
Access rights
© 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
Final published version
URL
Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
1995
Major/Subject
Mcode
Degree programme
Language
en
Pages
2364-2366
Series
Applied Physics Letters, Volume 66, Issue 18
Abstract
Novel in situ method to produce quantum dots is reported. Three‐dimensional confinement of carriers to a GaInAs/GaAs quantum welldots is observed by photoluminescence. The confinement potential is induced by stressors, formed by self‐organizing growth of InP nanoscale islands on top barrier GaAssurface. Two transitions arising from the strain‐induced quantum dots produced by two types of InP islands are identified. The luminescence from higher electronic states of the quantum dots having a level splitting of 8 meV is also observed.Description
Keywords
quantum dots, III‐V semiconductors, level splitting, luminescence, photoluminescence
Other note
Citation
Sopanen, M. & Lipsanen, Harri & Ahopelto, J. 1995. Strain-induced quantum dots by self-organized stressors. Applied Physics Letters. Volume 66, Issue 18. P. 2364-2366. ISSN 0003-6951 (printed). DOI: 10.1063/1.113984.