Self-compensation in highly n-type InN

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorRauch, C.
dc.contributor.authorTuomisto, F.
dc.contributor.authorKing, P.D.C.
dc.contributor.authorVeal, T.D.
dc.contributor.authorLu, Hai
dc.contributor.authorSchaff, W.J.
dc.contributor.departmentDepartment of Applied Physics
dc.date.accessioned2017-06-20T11:14:50Z
dc.date.available2017-06-20T11:14:50Z
dc.date.issued2012
dc.description.abstractAcceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.en
dc.description.versionPeer revieweden
dc.format.extent4
dc.format.extent1-4
dc.format.mimetypeapplication/pdf
dc.identifier.citationRauch , C , Tuomisto , F , King , P D C , Veal , T D , Lu , H & Schaff , W J 2012 , ' Self-compensation in highly n-type InN ' , Applied Physics Letters , vol. 101 , no. 1 , 011903 , pp. 1-4 . https://doi.org/10.1063/1.4732508en
dc.identifier.doi10.1063/1.4732508
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.otherPURE UUID: 31c5ec7f-7cfa-440d-96f2-909ea83c88b6
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/31c5ec7f-7cfa-440d-96f2-909ea83c88b6
dc.identifier.otherPURE LINK: http://dx.doi.org/10.1063/1.4732508
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/13453114/1_2E4732508.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/26942
dc.identifier.urnURN:NBN:fi:aalto-201706205666
dc.language.isoenen
dc.relation.ispartofseriesAPPLIED PHYSICS LETTERSen
dc.relation.ispartofseriesVolume 101, issue 1en
dc.rightsopenAccessen
dc.subject.keywordcompensation
dc.subject.keyworddefects
dc.subject.keywordIndium nitride
dc.subject.keywordmobility
dc.subject.keywordpositron annihilation
dc.titleSelf-compensation in highly n-type InNen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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