Self-compensation in highly n-type InN
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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4
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Applied Physics Letters, Volume 101, issue 1, pp. 1-4
Abstract
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.Description
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Rauch, C, Tuomisto, F, King, P D C, Veal, T D, Lu, H & Schaff, W J 2012, 'Self-compensation in highly n-type InN', Applied Physics Letters, vol. 101, no. 1, 011903, pp. 1-4. https://doi.org/10.1063/1.4732508