On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Date
2018
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
10
Series
ECS Journal of Solid State Science and Technology, Volume 7, issue 5, pp. P228-P237
Abstract
Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (Description
Keywords
DOPED SILICON, CHANNEL FINFETS, MOBILITY, DEVICES
Other note
Citation
Dhayalan, S K, Kujala, J, Slotte, J, Pourtois, G, Simoen, E, Rosseel, E, Hikavyy, A, Shimura, Y, Loo, R & Vandervorst, W 2018, ' On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si : P Epitaxial Films for Source-Drain Stressor Applications ', ECS Journal of Solid State Science and Technology, vol. 7, no. 5, pp. P228-P237 . https://doi.org/10.1149/2.0071805jss