Effective passivation of black silicon surfaces by atomic layer deposition

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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2013

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Department of Micro and Nanosciences

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en

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IEEE Journal of Photovoltaics, Volume 3, issue 1, pp. 90-94

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aluminum oxide, atomic layer deposition, black silicon, nanostructures

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DOI

10.1109/JPHOTOV.2012.2210031

Citation

Repo, P, Haarahiltunen, A, Sainiemi, L, Yli-Koski, M, Talvitie, H, Schubert, M & Savin, H 2013, 'Effective passivation of black silicon surfaces by atomic layer deposition', IEEE Journal of Photovoltaics, vol. 3, no. 1, pp. 90-94. https://doi.org/10.1109/JPHOTOV.2012.2210031

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https://urn.fi/URN:NBN:fi:aalto-202510087558

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[article-cris] Sähkötekniikan korkeakoulu / ELEC