Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2021-06-23
Major/Subject
Mcode
Degree programme
Language
en
Pages
10
Series
Advanced Materials Interfaces, Volume 8, issue 12
Abstract
Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2-xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine-doped In2O3 interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (mu(sat)) of approximate to 1 cm(2) V-1 s(-1) at a low 3 V operating voltage. When the dielectric material is annealed at 350 degrees C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 degrees C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.
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Keywords
high&#8208, &#954, oxide dielectrics, inkjet printing, printed electronics, solution&#8208, processed oxides, thin&#8208, film transistors, IN2O3 SEMICONDUCTOR LAYERS, HIGH-PERFORMANCE, GATE DIELECTRICS, LOW-TEMPERATURE
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Citation
Gillan, L, Li, S, Lahtinen, J, Chang, C-H, Alastalo, A & Leppäniemi, J 2021, ' Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation ', Advanced Materials Interfaces, vol. 8, no. 12, 2100728 . https://doi.org/10.1002/admi.202100728