Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation

Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2-xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine-doped In2O3 interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (mu(sat)) of approximate to 1 cm(2) V-1 s(-1) at a low 3 V operating voltage. When the dielectric material is annealed at 350 degrees C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 degrees C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.

Keywords

high&#8208, &#954, oxide dielectrics, inkjet printing, printed electronics, solution&#8208, processed oxides, thin&#8208, film transistors, IN2O3 SEMICONDUCTOR LAYERS, HIGH-PERFORMANCE, GATE DIELECTRICS, LOW-TEMPERATURE

DOI

10.1002/admi.202100728

Citation

Gillan , L , Li , S , Lahtinen , J , Chang , C-H , Alastalo , A & Leppäniemi , J 2021 , ' Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation ' , Advanced Materials Interfaces , vol. 8 , no. 12 , 2100728 . https://doi.org/10.1002/admi.202100728

Permanent link to this item

https://urn.fi/URN:NBN:fi:aalto-2021120110543

Collections

[article-cris] Perustieteiden korkeakoulu / SCI

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