Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
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© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/jap
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2012
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Language
en
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063511/1-4
Series
Journal of Applied Physics, Volume 111, Issue 6
Abstract
Surface passivation of GaAs by ammonia plasma and AlN fabricated by plasma-enhanced atomic layer deposition are compared. It is shown that the deposition temperature can be reduced to 150 °C and effective passivation is still achieved. Samples passivated by AlN fabricated at 150 °C show four times higher photoluminescence intensity and longer time-resolved photoluminescence lifetime than ammonia plasma passivated samples. The passivation effect is shown to last for months. The dependence of charge carrier lifetime and integrated photoluminescence intensity on AlN layer thickness is studied using an exponential model to describe the tunneling probability from the near-surface quantum well to the GaAssurface.Description
Keywords
III-V semiconductors, atomic layer deposition, carrier lifetime, gallium arsenide, passivation, photoluminescence, plasma materials processing, semiconductor quantum wells
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Citation
Mattila, P. & Bosund, M. & Huhtio, T. & Lipsanen, Harri & Sopanen, M. 2012. Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition. Journal of Applied Physics. Volume 111, Issue 6. P. 063511/1-4. ISSN 0021-8979 (printed). DOI: 10.1063/1.3694798.