Wafer-scale CMOS-compatible graphene Josephson field-effect transistors
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2024-07-01
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en
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6
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Applied Physics Letters, Volume 125, issue 1, pp. 1-6
Abstract
Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. Applications of JoFETs range from parametric amplifiers and superconducting qubits to a variety of integrated superconducting circuits. Here, we report on graphene JoFET devices fabricated with wafer-scale complementary metal-oxide-semiconductor (CMOS)-compatible processing based on chemical-vapor-deposited monolayer graphene encapsulated with atomic-layer-deposited Al2O3 gate oxide, lithographically defined top gate, and evaporated superconducting Ti/Al source, drain, and gate contacts. By optimizing the contact resistance down to ∼170 Ω μm, we observe proximity-induced superconductivity in the JoFET channels with different gate lengths of 150-350 nm. The Josephson junction devices show reproducible critical current I c tunablity with the local top gate. Our JoFETs are in the short diffusive limit with the I c reaching up to ∼3 µA for a 50 µm channel width. Overall, our demonstration of CMOS-compatible two-dimensional (2D) material-based JoFET fabrication process is an important step toward graphene-based integrated quantum circuits.Description
Publisher Copyright: © 2024 Author(s). | openaire: EC/H2020/824109/EU//EMP | openaire: EC/H2020/101053801/EU//ConceptQ | openaire: EC/HE/101113946/EU//OpenSuperQPlus100
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Generalov, A A, Viisanen, K L, Senior, J, Ferreira, B R, Ma, J, Möttönen, M, Prunnila, M & Bohuslavskyi, H 2024, ' Wafer-scale CMOS-compatible graphene Josephson field-effect transistors ', Applied Physics Letters, vol. 125, no. 1, 012602, pp. 1-6 . https://doi.org/10.1063/5.0203515