Shot Noise in Ballistic Graphene

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2008
Major/Subject
Mcode
Degree programme
Language
en
Pages
196802/1-4
Series
Physical Review Letters, Volume 100, Issue 19
Abstract
We have investigated shot noise in graphene field effect devices in the temperature range of 4.2–30 K at low frequency (f=600–850  MHz). We find that for our graphene samples with a large width over length ratio W/L, the Fano factor F reaches a maximum F∼1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller W/L, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.
Description
Keywords
graphene field, Dirac point, two-dimensional carbon
Other note
Citation
Danneau, R. & Wu, F. & Craciun, M. F. & Russo, S. & Tomi, M. Y. & Salmilehto, J. & Morpurgo, A. F. & Hakonen, Pertti J. 2008. Shot Noise in Ballistic Graphene. Physical Review Letters. Volume 100, Issue 19. 196802/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.100.196802