Shot Noise in Ballistic Graphene
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© 2008 American Physical Society (APS). This is the accepted version of the following article: Danneau, R. & Wu, F. & Craciun, M. F. & Russo, S. & Tomi, M. Y. & Salmilehto, J. & Morpurgo, A. F. & Hakonen, Pertti J. 2008. Shot Noise in Ballistic Graphene. Physical Review Letters. Volume 100, Issue 19. 196802/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.100.196802, which has been published in final form at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.100.196802.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2008
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Language
en
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196802/1-4
Series
Physical Review Letters, Volume 100, Issue 19
Abstract
We have investigated shot noise in graphene field effect devices in the temperature range of 4.2–30 K at low frequency (f=600–850 MHz). We find that for our graphene samples with a large width over length ratio W/L, the Fano factor F reaches a maximum F∼1/3 at the Dirac point and that it decreases strongly with increasing charge density. For smaller W/L, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.Description
Keywords
graphene field, Dirac point, two-dimensional carbon
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Citation
Danneau, R. & Wu, F. & Craciun, M. F. & Russo, S. & Tomi, M. Y. & Salmilehto, J. & Morpurgo, A. F. & Hakonen, Pertti J. 2008. Shot Noise in Ballistic Graphene. Physical Review Letters. Volume 100, Issue 19. 196802/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.100.196802