Predictable quantum efficient detector based on n-type silicon photodiodes

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorDönsberg, Timoen_US
dc.contributor.authorManoocheri, Farshiden_US
dc.contributor.authorSildoja, Meelisen_US
dc.contributor.authorJuntunen, Mikkoen_US
dc.contributor.authorSavin, Heleen_US
dc.contributor.authorTuovinen, Esaen_US
dc.contributor.authorRonkainen, Hannuen_US
dc.contributor.authorPrunnila, Mikaen_US
dc.contributor.authorMerimaa, Mikkoen_US
dc.contributor.authorTang, Chi Kwongen_US
dc.contributor.authorGran, Jarleen_US
dc.contributor.authorMueller, Ingmaren_US
dc.contributor.authorWerner, Lutzen_US
dc.contributor.authorRougie, Bernarden_US
dc.contributor.authorPons, Aliciaen_US
dc.contributor.authorSmid, Mareken_US
dc.contributor.authorGal, Peteren_US
dc.contributor.authorLolli, Lapoen_US
dc.contributor.authorBrida, Giorgioen_US
dc.contributor.authorRastello, Maria Luisaen_US
dc.contributor.authorIkonen, Erkkien_US
dc.contributor.departmentDept Signal Process and Acousten
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorHele Savin Groupen
dc.contributor.groupauthorMetrology Research Instituteen
dc.contributor.organizationVTT Technical Research Centre of Finlanden_US
dc.contributor.organizationJusterveseneten_US
dc.contributor.organizationPhysikalisch-Technische Bundesanstalten_US
dc.contributor.organizationLaboratoire Commun de Métrologie LNE-CNAMen_US
dc.contributor.organizationCSICen_US
dc.contributor.organizationCzech Metrology Instituteen_US
dc.contributor.organizationMagyar Kereskedelmi Engedélyezési Hivatal (MKEH)en_US
dc.contributor.organizationIstituto Nazionale di Ricerca Metrologica INRIMen_US
dc.date.accessioned2017-11-21T13:34:15Z
dc.date.available2017-11-21T13:34:15Z
dc.date.issued2017-12en_US
dc.description.abstractThe predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of PQEDs is no longer dependent on the availability of a certain type of very lightly doped p-type silicon wafers.en
dc.description.versionPeer revieweden
dc.format.extent16
dc.format.extent821-836
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationDönsberg, T, Manoocheri, F, Sildoja, M, Juntunen, M, Savin, H, Tuovinen, E, Ronkainen, H, Prunnila, M, Merimaa, M, Tang, C K, Gran, J, Mueller, I, Werner, L, Rougie, B, Pons, A, Smid, M, Gal, P, Lolli, L, Brida, G, Rastello, M L & Ikonen, E 2017, ' Predictable quantum efficient detector based on n-type silicon photodiodes ', Metrologia, vol. 54, no. 6, pp. 821-836 . https://doi.org/10.1088/1681-7575/aa85eden
dc.identifier.doi10.1088/1681-7575/aa85eden_US
dc.identifier.issn0026-1394
dc.identifier.issn1681-7575
dc.identifier.otherPURE UUID: 0440f558-42f6-459c-a0e3-5da3a641bbecen_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/0440f558-42f6-459c-a0e3-5da3a641bbecen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/15943633/Donsberg_2017_Metrologia_54_821.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/28749
dc.identifier.urnURN:NBN:fi:aalto-201711217570
dc.language.isoenen
dc.relation.ispartofseriesMetrologiaen
dc.relation.ispartofseriesVolume 54, issue 6en
dc.rightsopenAccessen
dc.subject.keywordradiometryen_US
dc.subject.keywordinduced junctionen_US
dc.subject.keywordsilicon photodetectoren_US
dc.subject.keywordprimary standarden_US
dc.subject.keywordradiant fluxen_US
dc.subject.keywordATOMIC LAYER DEPOSITIONen_US
dc.subject.keywordRESPONSE SELF-CALIBRATIONen_US
dc.subject.keywordINDUCED-JUNCTIONen_US
dc.subject.keywordCRYOGENIC RADIOMETERen_US
dc.subject.keywordROOM-TEMPERATUREen_US
dc.subject.keywordINVERSION LAYERen_US
dc.subject.keywordABSOLUTEen_US
dc.subject.keywordACCURACYen_US
dc.subject.keywordNONLINEARITYen_US
dc.subject.keywordMETROLOGYen_US
dc.titlePredictable quantum efficient detector based on n-type silicon photodiodesen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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