Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends

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© 2004 American Physical Society (APS). This is the accepted version of the following article: Tuomisto, Filip & Pennanen, K. & Saarinen, K. & Sadowski, J. 2004. Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends. Physical Review Letters. Volume 93, Issue 5. 055505/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.93.055505, which has been published in final form at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.93.055505.
Final published version

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Journal Title

Journal ISSN

Volume Title

School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2004

Major/Subject

Mcode

Degree programme

Language

en

Pages

055505/1-4

Series

Physical Review Letters, Volume 93, Issue 5

Abstract

We have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga1−xMnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite concentration increases with increasing Mn content. This is in agreement with thermodynamical considerations for the electronic part of the formation energy of the Ga sublattice point defects. However, the absolute defect concentrations imply that they are determined rather by the growth kinetics than by the thermodynamical equilibrium. The As antisite concentrations in the samples are large enough to be important for compensation and magnetic properites. In addition, the Ga vacancies are likely to be involved in the diffusion and clustering of Mn at low annealing temperatures.

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Keywords

GaMnAs, defects, compensation

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Citation

Tuomisto, Filip & Pennanen, K. & Saarinen, K. & Sadowski, J. 2004. Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends. Physical Review Letters. Volume 93, Issue 5. 055505/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.93.055505