Comparison of oxygen-chain models for late thermal double donors in silicon
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© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters. Volume 82, Issue 13 and may be found at http://scitation.aip.org/content/aip/journal/apl/82/13/10.1063/1.1563813.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2003
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Mcode
Degree programme
Language
en
Pages
2094-2096
Series
Applied Physics Letters, Volume 82, Issue 13
Abstract
The electronic and atomic structures of the oxygen chains assigned to late thermal double donors (TDDs) in silicon are studied using accurate total-energy calculations. We find that the ring-type O-chain model is best suited for TDDs and better than the di-Y-lid-type O-chain model. The ring-type O chains have slightly alternating C2v–C1h symmetry consistent with the recent high-field electron paramagnetic resonance experiments. The spin densities of the double-donor states are located outside the region of the O atoms, which makes the hyperfineinteraction of an unpaired donor electron with the 17Onuclear spins very weak.Description
Keywords
silicon, thermal double donors: oxygen chains, structures
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Citation
Lee, Y. J. & von Boehm, J. & Pesola, M. & Nieminen, Risto M. 2003. Comparison of oxygen-chain models for late thermal double donors in silicon. Applied Physics Letters. Volume 82, Issue 13. 2094-2096. ISSN 0003-6951 (printed). DOI: 10.1063/1.1563813.