Interdigitated Back Contact n-Type Solar Cell with Black Silicon Anti-Reflecting Layer: Simulations and Experiments
Loading...
URL
Journal Title
Journal ISSN
Volume Title
Sähkötekniikan korkeakoulu |
Master's thesis
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Authors
Date
Department
Major/Subject
Mcode
S3010
Degree programme
Language
en
Pages
64+9
Series
Abstract
In this work, we have processed as a reference n-type IBC cells with random pyramids on high quality float-zone silicon wafer. The front surface is passivated with Al2O3 grown by atomic layer deposition. The same structure is simulated with the software Silvaco ATLAS. The simulated IV-characteristic fits the experimental curve in the dark and under AM1.5G with a relative error below 1%. Previous measurements on minority carrier lifetime experiments on black silicon samples passivated with 20nm Al2O3 layer have resulted in an effective surface recombination velocity below 5 cm/s. This value was used to simulate IBC cells with black silicon by adjusting the above-mentioned ATLAS model in order to see the impact of black silicon on the solar cell efficiency. The results show an increase in short-circuit current (Isc) of 6mA and efficiency of 0.3% at normal incidence. Simulation reveals that a lower front surface recombination velocity would not significantly increase the efficiency of the cell. Furthermore, the simulations reveal that the emitter passivation is a critical parameter to increase further the efficiency of the cell.Description
Supervisor
Savin, HeleThesis advisor
Von Gastrow, GuillaumeLebedeva, Natalia