Point defects and p-type conductivity in Zn1-xMnxGeAs2
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© 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 116, Issue 2 and may be found at http://scitation.aip.org/content/aip/journal/jap/116/2/10.1063/1.4887118.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2014
Major/Subject
Mcode
Degree programme
Language
en
Pages
023501/1-7
Series
Journal of Applied Physics, Volume 116, Issue 2
Abstract
Positron annihilation spectroscopy is used to study point defects in Zn1–xMnxGeAs2 crystals with low Mn content 0≤x≤0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 10exp19≤p≤10exp21cm−3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 10exp16−10exp18 cm−3, are observed to increase with increasing Mn content in the alloy. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1–xMnxGeAs2 crystals.Description
Keywords
chalcogenides, p-type, vacancies, positrons
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Citation
Kilanski, L. & Rauch, C. & Tuomisto, Filip & Podgorni, A. & Dynowska, E. & Dobrowolski, W. & Fedorchenko, I. V. & Marenkin, S. F. 2014. Point defects and p-type conductivity in Zn1-xMnxGeAs2. Journal of Applied Physics. Volume 116, Issue 2. 023501/1-7. ISSN 0021-8979 (printed). DOI: 10.1063/1.4887118