Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1999-07-15
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en
Pages
4
1464-1467
1464-1467
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PHYSICAL REVIEW B, Volume 60, issue 3
Abstract
Native vacancies in Te-doped (5×1016–5×1018cm−3)GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.Description
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Gebauer , J , Lausmann , M , Staab , T E M , Krause-Rehberg , R , Hakala , M & Puska , M J 1999 , ' Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs ' , Physical Review B , vol. 60 , no. 3 , pp. 1464-1467 . https://doi.org/10.1103/PhysRevB.60.1464