Atomic/molecular layer deposition of Cu-organic thin films

No Thumbnail Available
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2018-01-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
10
15791-15800
Series
Dalton Transactions, Volume 47, issue 44
Abstract
The gas-phase atomic/molecular layer deposition (ALD/MLD) technique is strongly emerging as a viable approach to fabricate new exciting inorganic-organic hybrid thin-film materials. However, much less effort has been made to develop new precursors specifically intended for ALD/MLD; this applies to both the organic and inorganic precursors, and in the latter case in particular to transition metal precursors. Here we introduce copper bisdimethylaminopropoxide (Cu(dmap)2) as a promising transition metal precursor for ALD/MLD to be combined with a variety of organic precursors with different backbones and functional groups, i.e. hydroquinone (HQ), terephthalic acid (TPA), 4,4′-oxydianiline (ODA), p-phenylenediamine (PPDA) and 1,4-benzenedithiol (BDT). Hybrid Cu-organic thin films were obtained from all five organic precursors with appreciably high growth rates ranging from 1.0 to 2.6 Å per cycle. However, the Cu(dmap)2 + HQ process was found to yield hybrid Cu-organic films only at temperatures below 120 °C, while at higher temperatures metallic Cu films were obtained. The films were characterized by XRR, GIXRD, FTIR, Raman, XPS and UV-Vis spectroscopy.
Description
| openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT
Keywords
Other note
Citation
Hagen , D J , Mai , L , Devi , A , Sainio , J & Karppinen , M 2018 , ' Atomic/molecular layer deposition of Cu-organic thin films ' , Dalton Transactions , vol. 47 , no. 44 , pp. 15791-15800 . https://doi.org/10.1039/C8DT03735C