Interlayer coupling in Co/Si sandwich structures
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© 2000 American Physical Society (APS). This is the accepted version of the following article: Enkovaara, J. & Ayuela, A. & Nieminen, Risto M. 2000. Interlayer coupling in Co/Si sandwich structures. Physical Review B. Volume 62, Issue 23. 16018-16022. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.62.16018, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.62.16018.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2000
Major/Subject
Mcode
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Language
en
Pages
16018-16022
Series
Physical Review B, Volume 62, Issue 23
Abstract
The combinations of magnetic materials with traditional semiconductors are interesting possibilities for new magnetoresistive structures. In this work the interlayer magnetic coupling in Co-Si systems has been studied. The coupling has been calculated within the density-functional theory, and it has been observed to oscillate with a spatial period of two Si layers. The electronic structure analysis indicates the formation of quantum wells within the Si spacer.Description
Keywords
semiconductors, magnetic materials, magnetoresistive structures
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Citation
Enkovaara, J. & Ayuela, A. & Nieminen, Risto M. 2000. Interlayer coupling in Co/Si sandwich structures. Physical Review B. Volume 62, Issue 23. 16018-16022. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.62.16018.