Evolution of vacancy-related defects upon annealing of ion-implanted germanium
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© 2008 American Physical Society (APS). This is the accepted version of the following article: Slotte, J. & Rummukainen, M. & Tuomisto, Filip & Markevich, V. P. & Peaker, A. R. & Jeynes, C. & Gwilliam, R. M. 2008. Evolution of vacancy-related defects upon annealing of ion-implanted germanium. Phys. Rev. B. Volume 78, Issue 8. 085202/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.78.085202, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.78.085202.
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en
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085202/1-5
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Physical Review B, Volume 78, Issue 8
Abstract
Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×10 exp 12 cm exp−2 and 4×10 exp 14 cm exp−2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1×10 exp 13 cm exp −2 and a fluence of 1×10 exp 14 cm exp -2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.Description
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Slotte, J. & Rummukainen, M. & Tuomisto, Filip & Markevich, V. P. & Peaker, A. R. & Jeynes, C. & Gwilliam, R. M. 2008. Evolution of vacancy-related defects upon annealing of ion-implanted germanium. Phys. Rev. B. Volume 78, Issue 8. 085202/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.78.085202