Preventing light-induced degradation in multicrystalline silicon

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorLindroos, Jeanette
dc.contributor.authorBoulfrad, Yacine
dc.contributor.authorYli-Koski, Marko
dc.contributor.authorSavin, Hele
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-04-09T09:01:09Z
dc.date.available2015-04-09T09:01:09Z
dc.date.issued2014
dc.description.abstractMulticrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.en
dc.description.versionPeer revieweden
dc.format.extent5
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLindroos, Jeanette & Boulfrad, Yacine & Yli-Koski, Marko & Savin, Hele. 2014. Preventing light-induced degradation in multicrystalline silicon. Journal of Applied Physics. Volume 115, Number 15. 0021-8979 (printed). DOI: 10.1063/1.4871404.en
dc.identifier.doi10.1063/1.4871404
dc.identifier.issn0021-8979 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/15597
dc.identifier.urnURN:NBN:fi:aalto-201504092250
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesVolume 115, Number 15
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.rightsCopyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/japen
dc.rights.holderAmerican Institute of Physics
dc.subject.keywordcopper contaminationen
dc.subject.keywordilluminationen
dc.subject.keywordlight-induced degradationen
dc.subject.keywordLIDen
dc.subject.keywordaluminiumen
dc.subject.keywordsolar cellsen
dc.subject.keywordsiliconen
dc.subject.keywordmulticrystalline siliconen
dc.subject.keywordmc-Sien
dc.subject.keywordwaferen
dc.subject.keywordAl2O3 thin filmsen
dc.subject.otherEnergyen
dc.subject.otherPhysicsen
dc.subject.otherElectrical engineeringen
dc.titlePreventing light-induced degradation in multicrystalline siliconen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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