Preventing light-induced degradation in multicrystalline silicon

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2014
Major/Subject
Mcode
Degree programme
Language
en
Pages
5
Series
Volume 115, Number 15, Journal of Applied Physics
Abstract
Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.
Description
Keywords
copper contamination, illumination, light-induced degradation, LID, aluminium, solar cells, silicon, multicrystalline silicon, mc-Si, wafer, Al2O3 thin films
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Citation
Lindroos, Jeanette & Boulfrad, Yacine & Yli-Koski, Marko & Savin, Hele. 2014. Preventing light-induced degradation in multicrystalline silicon. Journal of Applied Physics. Volume 115, Number 15. 0021-8979 (printed). DOI: 10.1063/1.4871404.