High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorRinkiö, Marcus
dc.contributor.authorJohansson, Andreas
dc.contributor.authorZavodchikova, Marina Y.
dc.contributor.authorToppari, J. Jussi
dc.contributor.authorNasibulin, Albert G.
dc.contributor.authorKauppinen, Esko I.
dc.contributor.authorTörmä, Päivi
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-10-31T10:01:58Z
dc.date.available2015-10-31T10:01:58Z
dc.date.issued2008
dc.description.abstractCarbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their transfer characteristics. The hysteresis is often attributed to charge trapping in the dielectric layer between the nanotube and the gate. We find that the memory effect can be controlled by carefully designing the gate dielectric in nm-thin layers. By using atomic layer depositions (ALD) of HfO2 and TiO2 in a triple-layer configuration, we achieve to our knowledge the first CNT FETs with consistent and narrowly distributed memory effects in their transfer characteristics. The study includes 94 CNT FET samples, providing a good basis for statistics on the hysteresis seen in five different CNT-gate configurations.en
dc.description.versionPeer revieweden
dc.format.extent103019/1-16
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRinkiö, Marcus & Johansson, Andreas & Zavodchikova, Marina Y. & Toppari, J. Jussi & Nasibulin, Albert G. & Kauppinen, Esko I. & Törmä, Päivi. 2008. High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric. New Journal of Physics. Volume 10, Issue 10. 103019/1-16. ISSN 1367-2630 (printed). DOI: 10.1088/1367-2630/10/10/103019en
dc.identifier.doi10.1088/1367-2630/10/10/103019
dc.identifier.issn1367-2630 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/18238
dc.identifier.urnURN:NBN:fi:aalto-201510304811
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.ispartofseriesNew Journal of Physicsen
dc.relation.ispartofseriesVolume 10, Issue 10
dc.rights© 2008 IOP Publishing and Deutsche Physikalische Gesellschaft. This is the accepted version of the following article: Rinkiö, Marcus & Johansson, Andreas & Zavodchikova, Marina Y. & Toppari, J. Jussi & Nasibulin, Albert G. & Kauppinen, Esko I. & Törmä, Päivi. 2008. High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric. New Journal of Physics. Volume 10, Issue 10. 103019/1-16. ISSN 1367-2630 (printed). DOI: 10.1088/1367-2630/10/10/103019, which has been published in final form at iopscience.iop.org/1367-2630/10/10/103019. This work is distributed under the Creative Commons Attribution 3.0 License (https://creativecommons.org/licenses/by/3.0/).en
dc.rights.holderIOP Publishing
dc.subject.keywordcarbon nanotubesen
dc.subject.keywordfield-effect transistorsen
dc.subject.keywordCNT FETsen
dc.subject.keywordhysteresisen
dc.subject.otherPhysicsen
dc.titleHigh-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectricen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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