Atomic layer deposition of AlN using atomic layer annealing - Towards high-quality AlN on vertical sidewalls

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorÖsterlund, Elmerien_US
dc.contributor.authorSeppänen, Helien_US
dc.contributor.authorBespalova, Kristinaen_US
dc.contributor.authorMiikkulainen, Villeen_US
dc.contributor.authorPaulasto-Kröckel, Mervien_US
dc.contributor.departmentDepartment of Electrical Engineering and Automationen
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.departmentDepartment of Chemistry and Materials Scienceen
dc.contributor.groupauthorElectronics Integration and Reliabilityen
dc.contributor.groupauthorHarri Lipsanen Groupen
dc.date.accessioned2021-03-31T06:13:14Z
dc.date.available2021-03-31T06:13:14Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2022-03-09en_US
dc.date.issued2021-05-01en_US
dc.descriptionPublisher Copyright: © 2021 Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
dc.description.abstractAtomic layer deposition (ALD) of aluminum nitride (AlN) using in situ atomic layer annealing (ALA) is studied for microelectromechanical systems (MEMS). Effective piezoelectric in-plane actuation and sensing requires deposition of high crystal quality and (0002) oriented AlN on vertical sidewalls of MEMS structures. Previous studies have shown that the crystal quality of ALD AlN can be significantly improved using ALA but have not studied the conformal coverage or crystal quality on metal electrodes, which are required for piezoelectric MEMS devices. In this study, AlN thin films are deposited on Si, Al, Pt, and on vertical sidewalls etched into Si. The AlN microstructure and properties are studied using x-ray diffraction methods, transmission electron microscopy, and Fourier transform infrared spectroscopy. The conformal coverage is evaluated by measuring the film thickness on the vertical sidewalls. The effects of postdeposition annealing are studied as well. This study aims to enable effective piezoelectric actuation and sensing for MEMS sensors. The conformal coverage of the ALA ALD process is excellent and AlN has the best crystal quality and degree of orientation when deposited on Al. The as-deposited films contain oxygen impurities, which might be detrimental to the piezoelectric properties of AlN. Annealing at high temperatures reduced the number of impurities but did not improve the crystal quality.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationÖsterlund, E, Seppänen, H, Bespalova, K, Miikkulainen, V & Paulasto-Kröckel, M 2021, ' Atomic layer deposition of AlN using atomic layer annealing - Towards high-quality AlN on vertical sidewalls ', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 39, no. 3, 032403 . https://doi.org/10.1116/6.0000724en
dc.identifier.doi10.1116/6.0000724en_US
dc.identifier.issn0734-2101
dc.identifier.issn1520-8559
dc.identifier.otherPURE UUID: 387d0378-166c-442a-b851-131d4e4d7b3cen_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/387d0378-166c-442a-b851-131d4e4d7b3cen_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85102403593&partnerID=8YFLogxKen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/61199460/Osterlund_Atomic_layer_deposition_JVSTA.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/103396
dc.identifier.urnURN:NBN:fi:aalto-202103312669
dc.language.isoenen
dc.publisherAVS Science and Technology Society
dc.relation.ispartofseriesJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen
dc.relation.ispartofseriesVolume 39, issue 3en
dc.rightsopenAccessen
dc.titleAtomic layer deposition of AlN using atomic layer annealing - Towards high-quality AlN on vertical sidewallsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
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