Noise properties of the Bloch oscillating transistor
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© 2005 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 86, Issue 17 and may be found at http://scitation.aip.org/content/aip/journal/apl/86/17/10.1063/1.1919392.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors
Date
2005
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Language
en
Pages
173507/1-3
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Applied Physics Letters, Volume 86, Issue 17
Abstract
We have measured the current noise spectral density of the Bloch oscillating transistor as a function of current gain. We find, as expected from theory and simulations, that the equivalent input noise that shows up in the output is less than the shot noise of the normal-insulating-superconductor tunnel junction (base junction). At the optimal operating point we find a reduced input current noise of 1.0fA/√Hz and a corresponding noise temperature of 0.4 K. The differential current gain at the same point is as large as 30 and the power gain amounts to 35.Description
Keywords
Bloch oscillating transistor (BOT), SQUID
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Citation
Lindell, Rene & Hakonen, Pertti J. 2005. Noise properties of the Bloch oscillating transistor. Applied Physics Letters. Volume 86, Issue 17. 173507/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.1919392