Defect distribution in a-plane GaN on Al2O3

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors

Date

2007

Department

Department of Applied Physics

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Mcode

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Language

en

Pages

3

Series

Applied Physics Letters, Volume 90, issue 12, pp. 1-3

Abstract

The authors studied the structural and point defect distributions of hydride vapor phase epitaxial GaN film grown in the [11−20] a direction on (1−102) r-plane sapphire with metal-organic vapor phase deposited a-GaN template using transmission electron microscopy, secondary ion mass spectrometry, and positron annihilation spectroscopy. Grown-in extended and point defects show constant behavior as a function of thickness, contrary to the strong nonuniform defect distribution observed in GaN grown along the [0001] direction. The observed differences are explained by orientation-dependent and kinetics related defect incorporation.

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Keywords

non-polar, positron annihilation, SIMS, TEM

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DOI

10.1063/1.2715128

Citation

Tuomisto, F, Paskova, T, Kröger, R, Figge, S, Hommel, D, Monemar, B & Kersting, R 2007, 'Defect distribution in a-plane GaN on Al2O3', Applied Physics Letters, vol. 90, no. 12, 121915, pp. 1-3. https://doi.org/10.1063/1.2715128

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https://urn.fi/URN:NBN:fi:aalto-202510087673

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[article-cris] Perustieteiden korkeakoulu / SCI